Numerical simulation has been more and more important with the development of CdZnTe crystal growth technology.The effects of the geometry model,the material properties and the border temperature control conditions on the accuracy of global heat transfer model were analyzed.According to comparative results of model calculation and the measured temperature,those parameters were modified.Then,two temperatures settings were tested based on the modified global heat transfer model.The numerical results are consistent with the real ones.At last,the modified global model was applied to CdZnTe crystal growth simulation.The difference between the numerical temperature and the monitored temperature is less than 2 ℃.
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刘江高,吴卿.碲锌镉晶体生长全局热传递模拟模型准确度研究[J].激光与红外,2018,48(3):343~347 LIU Jiang-gao, WU Qing. Study on accuracy of global heat transfer simulation model for CdZnTe crystal growth[J]. LASER & INFRARED,2018,48(3):343~347