Total dose effects can affect obviously ROIC′s performance and even make its function fail.Frist,the mechanism of total dose effect on the threshold,leakage current and inter-device leakage current of NMOS devices is analyzed.Then,the hardening radiation design methods for 640×512 ROIC chip is proposed.Total ionizing dose experiment shows that the ROIC’s radiation tolerance,using enclosed gate geometry and ringed-source geometry,is beyond 100 krad(Si).
参考文献
相似文献
引证文献
引用本文
李敬国,温建国,陈彦冠.总剂量效应对CMOS读出电路影响及设计加固方法研究[J].激光与红外,2019,49(3):355~360 LI Jing-guo, WEN Jian-guo, CHEN Yan-guan. Study of total dose effects on CMOS readout integrated circuit and methods of hardened by design[J]. LASER & INFRARED,2019,49(3):355~360