To improve the performance and the work temperature of InAs/GaSb type Ⅱ superlattice photo-detectors,the transport performance of super-lattice absorption layer carriers is studied in this paper. InAs/GaSb type Ⅱ superlattices materials are grown on semi-insulating GaAs substrates by molecular-beam epitaxy(MBE). Hall measurement is used to characterize the electrical properties of the materials,and the effects of different growing conditions,including annealing,beam ratio and doping in different layers of the superlattice,on the electrical properties of the superlattice are studied.