To improve the performance and the work temperature of InAs/GaSb type Ⅱ superlattice photo-detectors,the transport performance of super-lattice absorption layer carriers is studied in this paper. InAs/GaSb type Ⅱ superlattices materials are grown on semi-insulating GaAs substrates by molecular-beam epitaxy(MBE). Hall measurement is used to characterize the electrical properties of the materials,and the effects of different growing conditions,including annealing,beam ratio and doping in different layers of the superlattice,on the electrical properties of the superlattice are studied.
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邢伟荣,刘铭,周朋,周立庆. InAs/GaSbⅡ类超晶格电学性能研究[J].激光与红外,2019,49(6):725~727 XING Wei-rong, LIU Ming, ZHOU Peng, ZHOU Li-qing. Research on electrical properties of InAs/GaSb type Ⅱ superlattice[J]. LASER & INFRARED,2019,49(6):725~727