Characteristic of etch pits formed on {111} B face of HgCdTe have been studied by etching of Schaake and Chen. We have found the best etching time of two etchants. There are two kinds of etch pits that has been found for both etchants in HgCdTe epilayer. Schaake’s etch pits contain two types of triangles and cashews, and Chen’s etch pits contain two types of triangles that have different etching planes. The further study has proved that two of Schaake’s etch pits and one of Chen’s etch pits have the characteristic of the dislocation, and we have found most of the dislocations are through to the substrate, furthermore there is an angle between directions of the dislocations and < 111 >. The high density of the etch pits is found nearmacroscop ical defects.