The CdTe/ CdZnTe/ Si thin film (Φ30mm) was grown with Hot Wall Epitaxy (HWE) technique. This film was tested structure of the cube blende with x-ray diffractometer (XRD) . XRD shows that the thin film is the cube blende with (111) direction. The Si substrate ,CZT buffer layer and CdTe thin film were tesed by using scanning electron microscopy(SEM) ,respectively. Results show that the surface morphology of Si substrate is rather rough ,the surface morphology of CdZnTe buffer layer is more denser than Si substrate. The surface morphology of CdTe thin film is lubriciouser than CdZnTe buffer layer ,which has more defects. The defect of CdTe thin film is less than that of CdZnTe buffer layer. The photograph of the CdTe/ CdZnTe/ Si film looks like mirror ,indicating that the big area thin film of CdTe/ CdZnTe/ Si can be made by using HWE technique.