Under considering the influence of temperature distributions to the thermodynamic parameters of the material, based on the thermal conduction equations and the thermal-elastic equations, the transient distributions of temperature and thermal stress in the semiconductor material InSb are calculated by a finite element analysis method. The damage mechanism of the material irradiated by 200 ns/1064 nm pulse lasers is studied. And the influence of the beam radius, the pulse width, the repetition rate and the number of pulses to the melting threshold and the thermal stress damage threshold of InSb is investigated in this paper.