100μm thick Cu substrate was deposited on the GaN surface by electroplating.Using the pulse laser at the energy density of 400mJ/cm~2,the GaN film was successfully transferred from sapphire to Cu.The scanning electron microscopy(SEM) images of the GaN film on Cu indicate that the electroplating Cu substrate formed compact boding with the GaN film and supported the film firmly during the laser lifit-off process.The GaN kept intact due to the excellent ductibility of the Cu substrate by releasing the strain s...