The research of Si/HgCdTe electrical properties through Hall and minority lifetime measurement of insitu grown material, Ptype annealed material and Ntype annealed material grown by MBE is reported. Compensated property of insitu grown Si/HgCdTe material was obtained, but the compensation was not the intrinsic character of material. By Ptype annealing, Si/HgCdTe material can be converted to noncompensated material, and increased mobility was acquired. Compared with insitu grown GaAs/HgCdTe material, Si/HgCdTe material is pending raise to a certain extent. Optimizing MBE growth technology thus improving HgCdTe quality and then increasing mobility is the crucial part of Sisub HgCdTe.