The development of GaNbased avalanche photodiodes was reviewed in this letter. Focused on fabricating high responsivity and low leakage current, the processes was related in detail, specially considering of physical damage induced in dryetched course and subsequent treatment aimed to remove the damage. Due to the great rely between avalanche device and material, it is the key issue to select out topquality material. By optimizing the processes, GaNbased avalanche photodiode was fabricated successfully, firstly in China. The effective diameter of devices was 40μm. The response of device was tested. It shows that the leakage current of the device was about 1.18×10-7 A and avalanche multiplication was determined to be about 3 when the reverse bias was 58 V.