GaNbased PIN UV photodetectors were irradiated at room temperature with 2MeV protons at fluences of 5×1014cm-2,2×1015cm-2.I-V characterization and response spectrum of the detectors were measured before and after irradiation to analyze the irradiation effect. Increase in the reverse dark current and decrease in the forward firing current were observed after proton irradiation. And then it was found that the responsivity was reduced obviously and the response spectrum shifted towards short wavelength slightly after irradiation. To analyze the proton irradiation effect on detectors the Raman and photoluminescence (PL) spectroscopy of GaN film irradiated with proton at fluences of 5×1014cm-2,2×1015cm-2 and 1×1016 cm-2 were measured. The Raman spectra showed the A1(LO) peak shifted with proton fluence. The carrier concentration obtained by curve fitting of the Raman data was found to decrease with the proton irradiation fluence. The PL spectra showed a quenching effect for the dominant peak and the yellow emission.
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白云,邵秀梅,陈亮,张燕,李向阳,龚海梅. GaN基PIN紫外探测器的质子辐照效应[J].激光与红外,2007,37(13):957~960 BAI Yun, SHAO Xiu-mei, CHEN Liang, ZHANG Yan, LI Xiang-yang, GONG Hai-mei. Proton Irradiation Effect on GaNbased PIN UV Detector[J]. LASER & INFRARED,2007,37(13):957~960