Based on the feature of alloying among dual metals and Ti/Al easily oxidized at RTP condition, by depositing a Ti/Al/Ti/Au layer structure on high Al contents N-AlxGa1xN(x≥0.45) surface, changing the ratio of Ti/Al and altering annealing temperature and time, ohmic contacts whose contact resistance is 4.9×10-2Ω·cm2 via TLM measurements between fourlayer metals Ti/Al/Ti/Au and high Al content N-AlGaN material was made. The sample used in the experiment was multilayer material with the P(Al0.45Ga0.55N)/i(Al0.45Ga0.55N)/NAl0.63Ga0.37N structure. Finally, the reason for forming ohmic contact is investigated by use of I-V measurements and AES depth profile.
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王玲,许金通,陈俊,陈杰,张燕,李向阳.高Al组分N-AlxGa1-xN材料的欧姆接触[J].激光与红外,2007,37(13):967~970 WANG Ling, XU Jin-tong, CHEN Jun, CHEN Jie, ZHANG Yan, LI Xiang-yang. The Ohmic Contacts of High Al Contents on NAlxGa1-xN Materials[J]. LASER & INFRARED,2007,37(13):967~970