Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; Graduate School of the Chinese Academy of Sciences, Beijing 100039, China 在知网中查找 在百度中查找 在本站中查找
The Kink phenomenon presented in the I-V output characteristics of CMOS devices at low temperature (T<50K) is studied. The impact of Kink effect on CMOS readout integrated circuits for cryogenic operation is examined. The output characteristic of source follower, the gain characteristic of common-source amplifier and two-stage amplifier all exhibit severe nonlinearity resulted from the Kink effect. Based on the analysis of Kink effect problems, several solutions are proposed for the design of CMOS readout integrated circuit operated at low temperature. The improvement is verified through the simulation.