PbSe thin films were prepared on Si (111) and SiO2 substrates using pulsed laser deposition (PLD) technique in order to investigate the properties of the films. XRD,X-ray EDS analysis,AFM and Fourier transform infrared spectroscopy were employed to characterize PbSe thin films. The results show that all of the films were heteromorphy and the growth temperature has effect to the diffract peaks of the films. The contents of PbSe thin films by PLD consisted with the targets,and realizing thin films deposited with same constitutes; the films had rather flatness surface and compact structure; the peak-to-tail roughness of PbSe thin films surfaces was less than 200nm;they had sensitivity to light of a specified wavelength and obvious absorption edge at 5μm corresponding to band-gap width of PbSe thin films;light of wavelength less than 5μm was strongly absorbed.