In this paper three different chemical systems have been studied to meet the requirements of continuously scaling down the pixel area for large-format high-density InSb FPAs.The lateral etch ratio,uniform and slope of the undercut sidewall were investigated for different chemical systems and etching conditions.An optimum wet etching process was got for small (2μm) feature patterning in large format FPA devices fabrication.
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韦书领,应明炯. InSb晶片湿法化学刻蚀研究[J].激光与红外,2008,38(9):899~901 WEI Shu-ling, YIN Ming-jiong. Wet Etching of InSb For Focal Plane Arrays[J]. LASER & INFRARED,2008,38(9):899~901