This paper gives a brief introduction to the ICP etching process & equipment.All the parameters which influence the etching profile of contact hole are detailedly discussed.The final etching parameters are given after a series of experiments.
李震,胡小燕,史春伟,朱西安.碲镉汞器件接触孔的ICP刻蚀工艺研究[J].激光与红外,2008,38(12):1211~1214 LI Zhen, HU Xiao-yan, SHI Chun-wei, ZHU Xi-an. A Study of MCT Contact Hole Etching by ICP Process[J]. LASER & INFRARED,2008,38(12):1211~1214