To describe thermomechanical response of semiconductors subjected to femtosecond laser heating,the hot-electron blast and complete self-consistent models are extended.A set of fully coupled thermoelasticity equations is derived based on the assumption of uniaxial stress.Numerical analysis is performed for a thin silicon film heated by a 500fs laser pulse using a finite difference method.It is shown that it takes a longer time for a high fluence to establish the thermal equilibrium than that for a low fluence.On the other hand,as time prolongs,two peaks of thermal stress increase gradually and move towards the center region of the film for a very thin silicon film.
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郭春凤,齐文宗,王德飞,于继平.飞秒激光作用下硅材料的热力响应[J].激光与红外,2009,39(3):260~263 GUO Chun-feng, QI Wen-zong, WANG De-fei, YU Ji-ping. Thermomechanical Response of Silicon Materials Heated by Femtosecond Lasers[J]. LASER & INFRARED,2009,39(3):260~263