This paper reviews the study on the classification,characteristics,origination and eliminating methods of the main defect on LPE epilayers grown by LPE. By measurement and assessment of the defects in HgCdTe epilayers,it can be possible to improve the growth procedure to meet the demanding requirements of future generation large format focal-plane arrays.
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刘铭,周立庆.碲镉汞液相外延薄膜典型缺陷及其起源分析[J].激光与红外,2009,39(3):280~284 LIU Ming, ZHOU Li-qing. Analysis of the Main Defects and Its′ Origin on HgCdTe Film Grown by LPE[J]. LASER & INFRARED,2009,39(3):280~284