HgCdTe Avalanche Photodiode array is a promising device with high gain,high bandwidth and low noise factor,it can provide very high performance multipling and detecting of IR photon signal in device level for the next generation of active/passive IR sensor system.This paper introduces the main APD device structures and their applications.
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刘兴新.碲镉汞雪崩光电二极管发展现状[J].激光与红外,2009,39(9):909~913 LIU Xing-xin. Status of HgCdTe avalanche photodiode arrays[J]. LASER & INFRARED,2009,39(9):909~913