In this work,we use reactive ion etching(RIE)for fabricating InSb mesa with CH4/H2/Ar plasma.We report on etch-induced damage in InSb caused by plasma,and a method for its reduction by means of wet etching.A postwet etching of the dry-etched samples effectively reduced the etch-induced defects and damage,leading to improved electrical properties in the etched InSb mesa.
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温涛,张影,肖钰,赵建忠.反应离子刻蚀InSb芯片引入的损伤研究[J].激光与红外,2010,40(6):622~624 WEN Tao, ZHANG Ying, XIAO Yu, ZHAO Jian-zhong. Study on reactive ion etching damage of InSb wafer[J]. LASER & INFRARED,2010,40(6):622~624