High efficiency luminescent amorphous silicon nitride films grown at room temperature with subsequent plasma oxidation were used as the active layers in the electroluminescent devices.A strong uniform green-yellow light emission from the devices was realized under forward biased conditions.It was found that the turn-on voltage could be reduced to as low as 6 V under the same forward voltage.The EL peak position is located at 540 nm,which is more close to that of the corresponding photoluminescence peak.The origin of light emission is suggested to be the same kind of luminescent centers related to the Si-O bonds.