At present,the semiconductor chips′ processing is developing toward 22 nm.The most probable method to achieve this size is EUV Lithography.The light emitted from EUV sources is very short (13.5 nm),and most of substances would absorb this radiation strongly,so using the transmission optics to collect the radiation is impossible.How to collect the radiation emitted from EUV sources efficiently becomes a big problem in EUV Lithography.This paper presents two kinds of EUV source Collector,near normal incidence collector and grazing incidence collector,and some designs or instances of them.Emphasis is put on the introduction about the nested grazing incidence Wolter Ⅰ Collector.
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左保军,祝东远,张树青,李润顺.下一代光刻技术的EUV光源收集系统的发展[J].激光与红外,2010,40(11):1163~1167 ZUO Bao-jun, ZHU Dong-yuan, ZHANG Shu-qing, LI Run-shun. Development of EUV source collectors for next generation lithography[J]. LASER & INFRARED,2010,40(11):1163~1167