CdTe（211）B films were grown by molecular beam epitaxy on As-passivated nominal three-inch Si（211）wafer using thin interfacial ZnTe（211）B buffer layer,and in-situ cyclic annealing has been used during CdTe deposition to improved crystal quality.The CdTe films were characterized with Optical microscopy,X-ray diffraction,AFM,FTIR and wet chemical defect etching.The results indicate that the CdTe（112）B films has good crystal quality,excellent uniformity over three-inch area,twin-free and the crystalline orientation is controlled.