Quantum well infrared photo-detector(QWIP)is influenced by many factors such as pressure,doping concentration,temperature and so on.This article mainly makes a study on the influence of temperature on band gap.At first,based on the energy level formula and electronic transition between energy levels in QWIP,the change of ΔEg with temperature is derived through the relation between band gap of GaAs and AlGaAs and temperature.Then,using the formula of absorption wavelength,the absorption wavelength of the three transitions with temperature is calculated.Finally,with photocurrent spectrum and three group values of absorption wavelength and wave number,the change of photocurrent peak′s position is analyzed,which provides a solution to the bandwidth problem of QWIP.
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王忠斌,温廷敦,许丽萍,张家鑫.基于带隙影响的量子阱红外探测器带宽的研究[J].激光与红外,2011,41(12):1337~1340 WANG Zhong-bin, WEN Ting-dun, XU Li-ping, ZHANG Jia-xin. Study on the bandwidth of quantum well infrared photo-detector[J]. LASER & INFRARED,2011,41(12):1337~1340