High-quality type-Ⅱ InAs/GaSb superlattices are on lattice-matched GaSb substrates.However,since there is no commercial semi-insulating GaSb substrate,traditional Hall measurement has difficulty to obtain the carrier concentration of the InAs/GaSb superlattices.Therefore,how to accurately acquire the carrier density of epitaxial SLs is a major task in the material growth optimization.Through years of research,several techniques have been developed to measure the carrier concentration of the thin films grown on conducting substrates.In this paper we review five typical approaches:①low-temperature Hall technique;②variable magnetic field Hall technique and mobility spectrum analysis;③growing an electrically isolating lattice matched AlGaAsSb buffer layer;④the technique of removing the substrate;⑤capacitance-voltage measurement.We discuss their basic principles,and comment on their advantages and disadvantages.