Device model as interface between IC process and design are very important for ensuring a successful IC design. The theory of BSIM3 is presented, and model parameters under low temperature (77K) are extracted. Meanwhile, the details of parameter extraction software are introduced and discussed.
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邓旭光.基于BSIM3的低温MOSFET模型及参数提取[J].激光与红外,2013,43(9):1051~1054 DENG Xu-guang. Low temperature MOSFET model and parameter extraction based on BSIM3[J]. LASER & INFRARED,2013,43(9):1051~1054