The recent development of a new type of Hg-based infrared material-HgCdSe is introduced,and the up-to-date research progress of its substrates including ZnTe/Si (211) and GaSb (211) is presented. Compared with HgCdTe,HgCdSe has higher performance,and its growth is easier,meanwhile it has mature substrate. It is considered that HgCdSe has the potential to be a powerful infrared material for the next generation detectors.
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王经纬, 巩锋.基于三代红外探测器的一种新型材料——硒镉汞[J].激光与红外,2013,43(10):1089~1094 WANG Jing-wei, GONG Feng. New material for the third generation of IRFPA—HgCdSe[J]. LASER & INFRARED,2013,43(10):1089~1094