Performance characterization and mechanism analysis of InSb wafer material
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摘要:
对2 in InSb(111)晶片材料位错密度、X光形貌、X射线双晶衍射半峰宽和电学参数进行了整片均匀性测试表征。结果表明材料整体性能极佳,并结合InSb晶体生长原理对晶片材料位错密度、掺杂浓度区域性分布进行了深层机理分析。
Abstract:
The uniformity of 2” InSb with Dislocation density,X-ray morphology,FWHM and Electronic parameter wafer are characterized. Results indicate the property of InSb crystal material is excellent,and area distribution mechanism of InSb wafer with dislocation density and doping concentration are analyzed according to the growth principle.
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巩锋,程鹏,吴卿,折伟林,陈元瑞. InSb晶片材料性能表征与机理分析[J].激光与红外,2013,43(10):1146~1148 GONG Feng, CHENG Peng, WU Qing, SHE Wei-lin, CHEN Yuan-rui. Performance characterization and mechanism analysis of InSb wafer material[J]. LASER & INFRARED,2013,43(10):1146~1148