In this paper,the Ohmic contact of low doped concentration n-GaAs (2×1017at/cm3) is studied by using transmission line model (TLM). The effects of controllable processing factors such as the Ni/AuGe thickness ratio,alloy temperature and alloy time to characteristics of the ohmic contacts are analyzed. Contact qualities including specific contact resistance,contact uniformity,and surface morphology are optimized by controlling these factors. Using the optimized process conditions,a specific contact resistance of 3.52×10-4Ωcm-2 is achieved. This is a basic result for the fabrication of terahertz quantum-well photodetector.
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宋淑芳,赵建建,谭振,孙浩.低掺杂浓度n型GaAs欧姆接触的研究[J].激光与红外,2013,43(11):1252~1255 SONG Shu-fang, ZHAO Jian-jian, TAN Zhen, SUN Hao. Study on Ohmic contacts of low doped concentration n-GaAs[J]. LASER & INFRARED,2013,43(11):1252~1255