For the excellent optical and electrical properties of InSb，the InSb material is one of the most important infrared detector materials in the field of military. High operating temperature (HOT) FPAs is an important direction for Infrared detector development，and the development of molecular beam epitaxy InSb material can achieve high-temperature work. High-quality InSb thin film growth by molecular beam epitaxy is presented，and the InSb epitaxial film’s crystal quality characterization and surface defects are analyzed by using optical microscopy，double-crystal X-ray diffraction，atomic force microscopy，SEM and EDX. Standard 128 ×128 arrays InSb chip is fabricated from this material，and all the results indicate the properties have reached the requirements of high-performance devices.