Based on Cohesive Zone Model (CZM)，the failure problem of delamination and fracture of InSb chip around N electrode materials is studied by using ANSYS.The simulation results show that InSb chip has an obviously tendency of delamination around N electrode materials along the groove.To study the distribution of fracture，the InSb chip is divided，and some cohesive nodes with equal step are selected in segmentation surfaces，relative separation along the X-axis is obtained，and the strain tendency of node with highest displacement of relative separation along the X，Y and Z-axis is drawn.In simulation results，the region which contains failure InSb chip and cohesive nodes with higher relative separation displacement is agree closely with the typical optical fracture distribution of InSb infrared focal plane arrays (IRFPAs)，which provides references for analysis of crack initiate and growth in InSb chip.