Rapid thermal annealing of InSb ion implantation of Be is studied,and experiments of different annealing temperatures and annealing time are made.Through the I-V test of PN junctions,effects of different annealing conditions on PN junctions are compared.PN junctions of high quality can be acquired under the exclusive given annealing condition,the experiment results are analyzed.
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李海燕,杜红艳,赵建忠.锑化铟离子注入退火技术研究[J].激光与红外,2013,43(12):1372~1375 LI Hai-yan, DU Hong-yan, ZHAO Jian-zhong. Study on InSb ion implantation annealing technology[J]. LASER & INFRARED,2013,43(12):1372~1375