The 5×5 CMOS array is designed with Devedit 3D.Based on the near-infrared (1μm)from Lnuminous,the effect of center distance，substrate doping and N-well depth on the crosstalk and collected charges is simulated with Silvaco TCAD.The simulation shows that the collected charges increase with the increase of center distance and N-well depth,and it decreases with the increase of substrate doping.The crosstalk is inversely proportional to center distance and the well depth,and it is proportional to the substrate doping concentration.Finally the causes of the above effects are theoretically analyzed.