An infrared focal plane arrays (IRFPA)detector chip structure and technological process with planar PN junction on InSb substrate based on thermal diffusion method is studied. A new IRFPA device preparation process is designed according to material characteristics of InSb. Amorphous silicon dioxide (SiO2),silicon oxynitride (SiON)thin film deposited by plasma enhanced chemical vapor deposition (PECVD)is chosen as mask in thermal diffusion method. Based on these,focal plane chip with better I-V characteristic curve is prepared.
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亢喆,邱国臣.基于热扩散制备平面PN结InSb红外焦平面芯片[J].激光与红外,2014,44(7):757~762 KANG Zhe, QIU Guo-chen. InSb IRFPA detector chip with planar PN junction based on thermal diffusion method[J]. LASER & INFRARED,2014,44(7):757~762