In order to improve electrical properties of the interface between the passivation layer and InSb substrate,different surface pretreatments are used.Through the C-V testing for InSb MIS structure,electrical characteristics of passivation structures produced by different surface pretreatments were evaluated.The results show that the plasma pretreatment can significantly improve the interface between the passivation layer and InSb substrate,especially N2O plasma can control interface traps and reduce the fixed charges.It is obvious to help to improve the reliability of InSb IR devices.
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肖钰,史梦然,宁玮,段建春.表面预处理对InSb钝化层界面的影响[J].激光与红外,2014,44(8):902~905 XIAO Yu, SHI Meng-ran, NING Wei, DUAN Jian-chun. Effect of pretreatment on interface between the passivation layer and InSb substrate[J]. LASER & INFRARED,2014,44(8):902~905