High operating temperature detector has become a significant direction of the 3rd generation infrared detectors. In order to achieve this aim,defects on the detector materials must be reduced. In this paper,the effect of different experimental conditions on InSb wafers grown by molecular beam epitaxy is studied,metallographic microscope,scanning electron microscope and X-ray double crystal diffraction are used to study the defects. The characteristics,origination and eliminating methods of these defects are analyzed. By MBE optimization,the best defect density has reached 483 cm-2.
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周朋,刘铭,邢伟荣,尚林涛,巩锋.分子束外延InSb薄膜缺陷分析[J].激光与红外,2014,44(9):1007~1010 ZHOU Peng, LIU Ming, XING Wei-rong, SHANG Lin-tao, GONG Feng. Analysis of defects on InSb film grown by MBE[J]. LASER & INFRARED,2014,44(9):1007~1010