Abstract:Indium antimonide(InSb)(melting point~525 ℃)is a narrow bandgap semiconductor,and it is well known for its highest bulk electron mobility,smallest effective mass,and largest g factor among binary III-V materials.It therefore has potential electronic applications in high-speed devices and magnetoresistors,and has been used previously as magnetic sensors and infrared(IR)detectors .It also has a large Bohr exciton radius of 60 nm,consequently making InSb nanostructure an attractive semiconductor for quantum effect studies.For its interesting properties,some work has been reported on the growth of InSb nanostructure.The recent growth of InSb nanostructure is described in this review.Transmission electron microscopy showed the nanostructure to be nanocrystal or nanowires.Device fabrication and characteristics show the application capability of next step.