Low-aluminium In1-xAlxSb film is growth and optimized by molecular beam epitaxial method.After a series of In1-xAlxSb films were grown on InSb (100)substrate under different conditions,the thermal deoxidation characterization of the substrate and the low-aluminium component control (approximate 2%)were analyzed,and the effect of process parameters such as annealing and InSb buffer layer optimization etc on morphology and quality of the film was discussed.The test results show the quality of the film has a great improvement.
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尚林涛,刘铭,邢伟荣,周朋,沈宝玉.低Al组分In1-xAlxSb薄膜的MBE生长和优化[J].激光与红外,2014,44(10):1115~1118 SHANG Lin-tao, LIU Ming, XING Wei-rong, ZHOU Peng, SHEN Bao-yu. MBE growth and optimization of low Al component In1-xAlxSb film[J]. LASER & INFRARED,2014,44(10):1115~1118