As the traditional handmade wafer mark way has the disadvantages that the typeface is not beautiful，the scratch is deep and Si pollutes，etc.，the 1060 nm fiber laser was used for laser mark.During the work，the effect of laser average power，pulse frequency and scan speed on mark definition，Si residue and mark depth were studied by the different measurement methods，such as eye inspection，metalloscope and 3D optical profiler.The results show that，when pulse frequency is at 20 kHz，mark definition gradually increases with increase of average power，and the number and distribution area of Si residue increase；however，the effect of average power on mark definition is not obviously when pulse frequency is at 90 kHz，and there is no Si residue.Pulse frequency is proportional to definition and degree of contamination，and the mark depth is inverse proportional to scan speed.Under the condition of 40 % average laser power，25kHz pulse frequency and 1500 mm/s scan speed，the mark is very clear and has no Si residue contamination，and its edge embossments are less than 200 nm.The overall results show that the developed technology is robust and it has replaced the handmade wafer mark.