A driver power of 808 nm/635 nm dual-channel semiconductor laser was developed,which is mainly composed of a constant current source and a temperature control circuit.The drive current of two channels is controlled by the output voltage of 12 bit DA.The current range of 808 nm and 635 nm channel are 0~3 A and 0~1 A respectively,and the control accuracy are respectively 0.73 mA and 0.24 mA.Temperature control circuit consists of temperature sensor,differential amplifier circuit,control circuit of proportion integration differentiation (PID) and drive circuit of semiconductor cooler (TEC).After amplifying temperature difference signal,TEC is driven and controlled to cool or heat through PID in order to ensure the stability of output power and wavelength.Application test was carried out at room temperature 23 ℃ (set working temperature at 25 ℃).Within 10 min,its power instability degree is 1.805% when drive current of 808 nm channel is 2.2 A;its power instability degree is 1.233% when drive current of 635 nm channel is 640 mA.The adjusted determination coefficients (Adj.R-Square) of linear fitting results are greater than 0.998 for two channels’ P/I characteristic curve.
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金文东,李迎新,杨基春,穆志明,王晗.双通道半导体激光电源控制技术[J].激光与红外,2015,45(4):373~377 JIN Wen-dong, LI Ying-xin, YANG Ji-chun, MU Zhi-ming, WANG Han. Power control technology of dual-channel semiconductor laser[J]. LASER & INFRARED,2015,45(4):373~377