In this paper,the intrinsic doping,n-type doping and p-type doping technology of the InSb film growth by molecular beam epitaxy are studied.Be is used as the p-type doping element and Te,Si are used as the n-type doping element.Semi insulating GaAs is used as the substrate of InSb layer growth by molecular beam epitaxy.Buffer layer growth under low temperature can reduce the large mismatch stress,and high quality InSb films can be obtained.The doped concentration and migration rate of the experimental samples were measured by Hall and SIMS,and the influence factors of doping rules,doping element segregation and activate rules are analyzed.