A passively Q-switched picosecond microchip laser is reported,which adopted a simple and compact end-pumped structure.With a thin Nd∶YVO4 crystal as the gain material and a semiconductor saturable absorber mirror (SESAM) as the passive Q-switch,the microchip laser is able to operate in both normal- incidence and oblique-incidence schemes and obtains picosecond pulsed laser outputs with the repetition rate ranging from several hundred kilohertz (kHz) to megahertz (MHz).The laser performance is measured with a fiber-coupled 808 nm laser diode as the pump source.At a normal-incidence,pump power of 420 mW,the average output power of the 1064 nm laser is 6.40 mW,and the pulse width is 57.8 ps,corresponding to a single pulse energy of 6 nJ,and the beam-quality parameters in the x and y directions are 1.18 and 1.17,respectively.At an oblique-incidence,pump power of 550 mW,the average output power of the 1064 nm laser is 2.25 mW,and the pulse width is 64.3 ps,corresponding to a single pulse energy of 17 nJ,and the beam-quality parameters in the x and y directions are 1.29 and 1.32,respectively.
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杨欢,余锦,张尚,刘洋,张雪. LD泵浦被动调Q皮秒Nd∶YVO4微片激光器[J].激光与红外,2015,45(11):1325~1330 YANG Huan, YU Jin, ZHANG Shang, LIU Yang, ZHANG Xue. Experiment of LD pumped Nd∶YVO4 picosecond passively Q-switched microchip laser[J]. LASER & INFRARED,2015,45(11):1325~1330