Abstract:InSb is a direct band-gap semiconductor material,and its energy gap is 0.232 eV at 77 K,so it is a very important fabricating material for 3~5 μm infrared detectors. The fabrication and application of InSb material is introduced. The crystal structure,thermal property,mechanical property,optical property and electrical property of InSb are discussed. The research direction and possible difficulties in InSb material fabrication are predicted according to its properties.