The ion bombardment and nitrogen passivation treatment process in the cavity were studied for 980 nm semiconductor lasers.This two treatment processes can improve the output characteristics and COD power of 980 nm semiconductor lasers,and output power increases by 32.14%.Lasers with nitrogen passivation have no evident degradation after the aging experiment,but lasers with non-nitrogen passivation have severe degradation.The part of the nitrogen ions leaves the cavity surface after the lasers with nitrogen passivation are measured by the Auger spectroscopy analyzer(AES).The content of nitrogen increases from 0% to 20%,but the content of oxygen decreases from 61% to 30%.The results show that this process can improve the cavity surface features of semiconductor lasers,which makes the reliability and the life of the device increase.