Taking GaAs (100) as a substrate,an 85 periods InSb low temperature buffer layer with about 30nm thick is introduced between GaAs buffer layer and InSb epitaxial layer by ALE method,which rapidly reduces the influence of lattice mismatch between InSb and GaAs on epitaxial layer,thus,the electrical properties of heteroepitaxial films will be improved. The experimental results show InSb low temperature buffer layer can rapidly release the stress of lattice mismatch and reduce defect density. Hall tests at room temperature and 77K show the electrical properties of InSb epitaxial layer grown by ALE method are significantly improved compared with the conventional method.
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尚林涛,刘铭,周朋,邢伟荣,沈宝玉. ALE法对InSb/GaAs异质薄膜电学性能的改进[J].激光与红外,2017,47(1):67~71 SHANG Lin-tao, LIU Ming, ZHOU Peng, XING Wei-rong, SHEN Bao-yu. Electrical performance of InSb/GaAs films improved by ALE[J]. LASER & INFRARED,2017,47(1):67~71