The theory of flip chip bonding technology was introduced,and technical characteristics of flip chip bonding process for infrared FPA was expounded.The technical parameters of flip chip bonding technology for mega pixels infrared FPA device were optimized and determined through the experiments and analysis,which lay the foundation for the development of infrared FPA detector.
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谢珩,王宪谋,王骏.百万像素级红外焦平面器件倒装互连工艺研究[J].激光与红外,2017,47(3):319~321 XIE Heng, WANG Xian-mou, WANG Jun. Research on flip chip bonding technology for mega pixels HgCdTe infrared FPA device[J]. LASER & INFRARED,2017,47(3):319~321