The recent research progress on molecular beam epitaxy growth of HgCdTe on Si substrate is reported. Based on the fabrication technology of MW HgCdTe and SW HgCdTe on Si substrate,the fabrication technology of molecular beam epitaxy growth of SW/MW-HgCdTe on Si based substrate was developed. Through on-line monitoring of RHEED,the fabrication technology for SW/MW-HgCdTe growth on Si substrate was optimized. With this technology,high quality SW/MW-HgCdTe wafers were obtained.
参考文献
相似文献
引证文献
引用本文
高达,王经纬,王丛. Si基中短波双色HgCdTe材料生长及表征[J].激光与红外,2017,47(5):586~590 GAO Da, WANG Jing-wei, WANG Cong. Growth and characterization of SW/MW dual band HgCdTe film on Si substrate[J]. LASER & INFRARED,2017,47(5):586~590