The Au-doped HgCdTe epilayer on CdZnTe substrates was grown by LPE.The Au-doped HgCdTe epilayer was characterized with some measurement methods,such as metallurgical microscope,X-ray diffraction,SIMS,Hall and minority carrier lifetime,and so on.The measuring results show that HgCdTe epilayer has good surface topography and lattice quality,and minority carrier lifetime is approximately 10 times as that of conventional HgCdTe films,and R0A increases by 5 times.Based on this material,256×256 LWIR FPAs with λc of 10 μm at 77 K have been grown,and its non uniformity of response is 2.85%,and effective pixel is 99.2%.