As the extrinsic p-type doped HgCdTe material has the high minority carrier lifetime,it can effectively improve the performance of long wave infrared or very long wave infrared HgCdTe detector.The basic theory of As doped p-type HgCdTe was expounded,and research progress of p-on-n infrared detector was introduced,which provides a certain reference for the research of As doped p-type HgCdTe material.