InSb has important research significance for 3~5 μm mid-wave infrared band.Based on InSb (100) substrate,the high quality InSb homo-epitaxial samples were obtained by optimizing some parameters,such as substrate preprocess,growth temperature and V / III beam ratio,etc.The surface roughness of the sample is about 0.3 nm (10 μm × 10 μm),FWHM is about 7 arcsec.Under the same growth temperature and V / III beam ratio,InSb intrinsic layer on the GaAs (100) substrate was grown by atomic layer epitaxial buffer layer method,and a high quality hetero-epitaxial InSb sample was obtained.Electron mobility of 1.5 μm sample reaches up to 6.06 × 104 cm2V-1s-1 at room temperature,and the best FWHM of 3 μm sample is as low as 126 arcsec.The optimized growth of homogeneous and hetero-epitaxial InSb materials can provide an important reference for the optimized growth of InSb devices at high working temperature.